论文信息 - Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors - 字舞流文

Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Zhaojun Lin | Gang Dai | Peng Cui | Yuanjie Lv | Chen Fu | Yang Zhou | Jianghui Mo | Huan Liu | Aijie Cheng | Chongbiao Luan