论文信息 - Damage and strain in pseudomorphic vs relaxed GexSi1−x layers on Si(100) generated by Si ion irradiation - 字舞流文

Damage and strain in pseudomorphic vs relaxed GexSi1−x layers on Si(100) generated by Si ion irradiation

B. Holländer | M. Nicolet | A. Vantomme | F. Eisen | T. Vreeland | D. Lie | K. Wang | T. Carns | M. -A. Nicolet | D. Y. C. Lie | T. K. Carns