Experimental investigation of damping factors in 20% scandium-doped aluminum nitride laterally vibrating resonators

This paper reports experimental investigation of damping factors for 20% Scandium-doped Aluminum Nitride (ScAlN) laterally vibrating resonators (LVRs). ScAlN films for LVRs are very promising since they enable greater electromechanical coupling (kt2) than undoped AlN films (∼ 2X for 20% doping), but have generally exhibited lower quality factors (Qs) [1,2]. This work is the first to study what damping factors impact the performance of these devices and provide preliminary design guidelines to attain high Qs. Different ScAlN LVR geometries are analyzed and devices tested in air, under vacuum, and at cryogenic temperatures (11 K). Anchor losses and thermoelastic damping (TED) are evaluated and compared to AlN LVRs. Similarities in thermal scaling of Qs in ScAlN resonators indicate that the source of TED is similar to AlN devices.

[1]  Gianluca Piazza,et al.  Investigation of 20% scandium-doped aluminum nitride films for MEMS laterally vibrating resonators , 2017, 2017 IEEE International Ultrasonics Symposium (IUS).

[2]  P. Muralt,et al.  Properties of AlScN thin films for hybrid BAW/SAW resonator fabrication , 2017, 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFC).

[3]  Yipeng Lu,et al.  Design, Fabrication, and Characterization of Scandium Aluminum Nitride-Based Piezoelectric Micromachined Ultrasonic Transducers , 2017, Journal of Microelectromechanical Systems.

[4]  Gianluca Piazza,et al.  Thermoelastic Damping in the Electrodes Determines $Q$ of AlN Contour Mode Resonators , 2017, Journal of Microelectromechanical Systems.

[5]  Gianluca Piazza,et al.  A Study on the Effects of Release Area on the Quality Factor of Contour-Mode Resonators by Laser Doppler Vibrometry , 2017, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control.

[6]  Rich Ruby,et al.  A Snapshot in Time: The Future in Filters for Cell Phones , 2015, IEEE Microwave Magazine.

[7]  G. Piazza,et al.  Anchor Losses in AlN Contour Mode Resonators , 2015, Journal of Microelectromechanical Systems.

[8]  M. Esashi,et al.  ScAlN Lamb wave resonator in GHz range released by XeF2 etching , 2013, 2013 IEEE International Ultrasonics Symposium (IUS).

[9]  M. Akiyama,et al.  Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films , 2013 .