Bias temperature instability and hot carrier circuit ageing simulations specificities in UTBB FDSOI 28nm node

We present new reliability features related to the use of a wide range of bulk back biasing in advanced UTBB FDSOI devices. NBTI and HCI stresses were done addressing degradation dependencies vs. bulk bias with the help of TCAD simulations in order to validate our new proposed NBTI physical model in UTBB FDSOI CMOS node.

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