N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide

We have fabricated n-channel 25-nm gate length FinFETs with Schottky-barrier source and drain featuring a self-aligned ytterbium silicide (YbSi<sub>1.8</sub>). A low-temperature silicidation process was developed for the formation of the low electron barrier height YbSi <sub>1.8</sub> phase, without reaction with SiO<sub>2</sub> isolation or SiN spacer materials, enabling integration in a CMOS fabrication process flow. The fabricated device exhibits good device characteristics with a drive current of 241 muA/mum at V<sub>DS</sub>=V<sub>GS</sub>-V<sub>t</sub>=1 V, I<sub>on</sub>/I<sub>off</sub>=10<sup>4</sup> at V<sub>DS</sub>=1.1 V, subthreshold swing of 125 mV/decade, and drain-induced barrier lowering of 0.26 V/V

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