In this article, we propose a broadband fully integrated power amplifier (PA) using a waveform shaping harmonic matching network. A comprehensive theory is developed for the proposed multi-resonance harmonic matching network to derive design criteria for achieving wide bandwidth, low insertion loss, and optimum load impedances in the second- and third-harmonic frequency bands. Furthermore, it is shown that this network can be realized using a lower total inductance compared to a standard bandpass network which is an important feature in reducing chip area and fabrication cost. A fully integrated PA prototype is implemented using a 250-nm GaN-on-SiC process with 28-V supply. The PA provides 33.9–36.1dBm output power (at 2–3dB gain compression), 42–51% drain efficiency (DE), 38–48% power-added efficiency (PAE), and 10–12.2dB power gain, across 4.0–6.0GHz. The output-power 1-dB bandwidth is 3.6–5.6GHz (44.5%). For a 64-QAM signal with 8dB peak-to-average power ratio (PAPR) at 5.0GHz, the PA can provide 30.2dBm average output power and 32% average PAE with RMS error vector magnitude (EVM) of −34.0/−32.4/−28.4dB (2.0/2.4/3.8%) for 50/100/200MHz modulation bandwidth, without using digital predistortion (DPD). The maximum average output power and average PAE, under the linearity constraint EVM <−28dB, are respectively 32.1/32.0/30.2dBm and 39/38/32%, for modulation bandwidth of 50/100/200 MHz.