论文信息 - Nonuniform mesh diode simulation code

Nonuniform mesh diode simulation code

A new version of a diode simulation code has been written which allows for nonuniform zoning in both the r and z directions. This new flexibility enables more accurate treatment of crucial areas in the diode such as near emission surfaces and in target regions. The new code also has the ability to treat slanted surfaces such as that found in a tapered cathode diode. An interesting result of the new code is that a ’’parapotential’’ cathode pinches better than the corresponding flat cathode at the same total current.

J. P. Quintenz | J. Quintenz

[1] David J. Johnson,et al. Anode scattering effects on electron pinch radius in low‐impedance REB diodes , 1977 .

[2] J. Gillis,et al. Methods in Computational Physics , 1964 .

[3] Shyke A. Goldstein,et al. Ion-induced pinch and the enhancement of ion current by pinched electron flow in relativistic diodes , 1975 .

[4] A. R. Mitchell. Computational methods in partial differential equations , 1969 .

[5] J. Poukey. Two‐dimensional ion effects in relativistic diodes , 1975 .

[6] Peter T. Kirstein,et al. Space-Charge Flow , 1968 .

[7] J. Quintenz,et al. Ion current reduction in pinched electron beam diodes , 1977 .

[8] Eugenia Kálnay de Rivas. On the use of nonuniform grids in finite-difference equations , 1972 .

[9] John M. Creedon,et al. Relativistic Brillouin flow in the high ν/γ diode , 1975 .

[10] L. P. Mix,et al. Measurements of large ion currents in a pinched relativistic electron beam diode , 1977 .