Benchmarking the PSP Compact Model for MOS Transistors

Recently, the PSP model was selected as the first surface-potential-based industry standard compact MOSFET model. This work presents the results of several qualitative "benchmark" tests that over the last two years were used to verify the physical behavior of the new model and its usefulness for future generations of CMOS IC design. These include newly developed tests and previously unavailable experimental data stemming from low-power, RF, mixed-signal, and analog applications of MOSFETs.

[1]  W. Grabinski,et al.  RF distortion analysis with compact MOSFET models , 2004, Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571).

[2]  C. Sah,et al.  Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors☆ , 1966 .

[3]  G. Gildenblat,et al.  PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation , 2006, IEEE Transactions on Electron Devices.

[4]  K. Suyama,et al.  MOSFET modeling for analog circuit CAD: Problems and prospects , 1993, Proceedings of IEEE Custom Integrated Circuits Conference - CICC '93.

[5]  J. Brews.  A charge-sheet model of the MOSFET , 1978 .

[6]  Ronald van Langevelde,et al.  Compact modeling of noise in CMOS , 2006, IEEE Custom Integrated Circuits Conference 2006.

[7]  A. Ziel.  Noise in solid state devices and circuits , 1986 .

[8]  G. Gildenblat,et al.  A Unified Nonquasi-Static MOSFET Model for Large-Signal and Small-Signal Simulations , 2006, IEEE Transactions on Electron Devices.

[9]  C.C. McAndrew,et al.  Validation of MOSFET model Source–Drain Symmetry , 2006, IEEE Transactions on Electron Devices.

[10]  R. van Langevelde,et al.  Physical Background of MOS Model 11 , 2003 .

[11]  C. C. McAndrew.  Useful numerical techniques for compact modeling , 2002, Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002..

[12]  C. C. McAndrew,et al.  An improved MOSFET model for circuit simulation , 1998 .

[13]  G. Gildenblat,et al.  A Compact Model for Valence-Band Electron Tunneling Current in Partially Depleted SOI MOSFETs , 2007, IEEE Transactions on Electron Devices.