Novel chemically amplified resists incorporating anionic photoacid generator functional groups for sub-50-nm half-pitch lithography
暂无分享,去创建一个
Mingxing Wang | Clifford L. Henderson | Cheng-Tsung Lee | Wang Yueh | Kenneth E. Gonsalves | Nikola Batina | Melina Tapia-Tapia
[1] M. Shirai,et al. Photoacid and Photobase Generators: Prospects and Their Use in the Development of Polymeric Photosensitive Systems. , 1998 .
[2] T. Fujigaya,et al. A New Positive Working Alkaline Developable Photoresist Based on a Simple Amorphous Molecule, Tri(3, 5-di-tert- butoxycarbonyloxybenzyl) 1, 3, 5-benzenetricarboxylate and a Photoacid Generator. , 2001 .
[3] Kouji Mitani,et al. Molecular waterwheel (noria) from a simple condensation of resorcinol and an alkanedial. , 2006, Angewandte Chemie.
[4] Hiroaki Oizumi,et al. Theoretical estimation of absorption coefficients of various polymers at 13 nm , 2000 .
[5] Kim Dean,et al. Improved lithographic performance for EUV resists based on polymers having a photoacid generator (PAG) in the backbone , 2005 .
[6] Mingxing Wang,et al. New Anionic Photoacid Generator Bound Polymer Resists for EUV Lithography , 2007 .
[7] Hiroshi Ito. Chemical amplification resists for microlithography , 2005 .
[8] Hyo-Jin Yun,et al. Novel molecular resist based on derivative of cholic acid , 2002 .
[9] James W. Thackeray,et al. Following the Acid: Effect of Acid Surface Depletion on Phenolic Polymers , 1995 .
[10] Mingxing Wang,et al. Novel Anionic Photoacid Generators (PAGs) and Corresponding PAG Bound Polymers , 2006 .
[11] Mingxing Wang,et al. Effects of photoacid generator incorporation into the polymer main chain on 193 nm chemically amplified resist behavior and lithographic performance , 2007 .
[12] Jin Baek Kim,et al. A positive-working alkaline developable photoresist based on partially tert-Boc-protected calix[4]resorcinarene and a photoacid generator , 2002 .
[13] Mingxing Wang,et al. Novel polymeric anionic photoacid generators (PAGs) and corresponding polymers for 193 nm lithography , 2006 .
[14] Banqiu Wu,et al. Extreme ultraviolet lithography: A review , 2007 .
[15] Hiroo Kinoshita,et al. CA Resist with Side Chain PAG Group for EUV Resist , 2006 .
[16] Wang Yueh,et al. Arylonium photoacid generators containing environmentally compatible aryloxyperfluoroalkanesulfonate groups , 2007 .
[17] Mingxing Wang,et al. Novel anionic photoacid generators (PAGs) and corresponding PAG bound polymers for sub-50 nm EUV lithography , 2007 .
[18] Donald W. Johnson,et al. Photoacid generators in chemically amplified resists , 1998, Advanced Lithography.
[19] R. H. Stulen,et al. Extreme ultraviolet lithography , 1999 .
[20] Hajime Mori,et al. Novel molecular resist based on a first generation dendrimer possessing furan rings , 2006 .
[21] C. Grant Willson,et al. Acid catalyst mobility in resist resins , 2002 .
[22] Jean M. J. Fréchet,et al. Dendrimers with Thermally Labile End Groups: An Alternative Approach to Chemically Amplified Resist Materials Designed for Sub‐100 nm Lithography , 2000 .
[23] Hengpeng Wu,et al. A Novel Single‐Component Negative Resist for DUV and Electron Beam Lithography , 2001 .