High density flash memory device, cell string and fabricating method thereof

The present invention relates to a second high-density flash memory cell device, a cell string and a method of manufacturing the same. The cell element has a first doping semiconductor area, wherein the first doping the second doping semiconductor areas formed on a semiconductor region formed on a semiconductor substrate, a semiconductor substrate; Wherein the second doping third doping semiconductor area formed on the semiconductor region; It said third doping a gate stack formed on the semiconductor region; And a control electrode formed on said gate stack; comprises a. The first and the second doping semiconductor areas is characterized in that the doping with each other in a different semiconductor type. The third doping semiconductor regions of the second doping region and the semiconductor band gap made of a different material, the second dough is in the same zip doped semiconductor type and the semiconductor region. The flash memory cell string is formed by switching elements for forming a plurality of cells are arranged in a device having the above-described structure, or a line of said arranged cell devices and a cell selection. By the present invention greatly improves the reduction in size and performance characteristics of the conventional NOR or NAND flash memory device of cells. Cell element according to the present invention because it does not include a channel and the source / drain, unlike traditional type transistor cell device and the manufacturing process simpler than the conventional memory, and significantly improve problems such as cross-talk and read disturb. Flash memory, GIDL, high-density, high-performance, strings, nanodevices