X-band GaAs mHEMT LNAs with 0.5 dB noise figure

Two X-band LNA ICs have been demonstrated using a 0.15 /spl mu/m metamorphic GaAs HEMT technology. The amplifiers have an average noise figure of 0.5 dB and power gain greater than 31 dB from 7-10 GHz. A current-shared version had gain flatness better than 1 dB, return losses greater than 11 dB, and power consumption of 42 mW. A high linearity version has an output third-order intercept point greater than 20.5 dBm from 6-12 GHz.

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