New possibilities for efficient silicon integrated electro-optical modulators

Abstract A new class of silicon electro-optical modulators for λ = 1.3 and 1.55 μm is proposed and analyzed. The devices, based on single- and multi-pass Fabry-Perot interferometry, can be built by standard microelectronic tecniques.

[1]  Dennis G. Hall.  Survey of Silicon-Based Integrated Optics , 1987, Computer.

[2]  M. Young,et al.  Geometrical theory of multimode optical fiber-to-fiber connectors , 1973 .

[3]  J. O. Porteus.  Relation between the Height Distribution of a Rough Surface and the Reflectance at Normal Incidence , 1963 .

[4]  R. Soref,et al.  Silicon double‐injection electro‐optic modulator with junction gate control , 1988 .

[5]  Kenichi Iga,et al.  Monolithic two‐section GaInAsP/InP active‐optical‐resonator devices formed by reactive ion etching , 1981 .

[6]  T. Moss,et al.  Semiconductor Opto-Electronics , 1973 .

[7]  H. Eichler,et al.  Optical tuning of a silicon Fabry-Perot interferometer by a pulsed 1.06 µm laser , 1981 .

[8]  M. Simard-Normandin,et al.  All-optical, silicon based, fiber optic modulator using a near cutoff region , 1989 .

[9]  Olav Solgaard,et al.  All‐silicon integrated optical modulator for 1.3 μm fiber‐optic interconnects , 1989 .

[10]  Bumman Kim,et al.  Optical channel waveguide switch and coupler using total internal reflection , 1978, IEEE Journal of Quantum Electronics.

[11]  M. Valli,et al.  Structural and optical properties of silicon oxynitride on silicon planar waveguides. , 1990, Applied optics.

[12]  A. Herlet.  The forward characteristic of silicon power rectifiers at high current densities , 1968 .

[13]  S. Ghandhi.  Semiconductor power devices , 1977 .

[14]  S. Solimeno,et al.  Guiding, Diffraction, and Confinement of Optical Radiation , 1986 .

[15]  R. A. Soref,et al.  1.3 μm electro‐optic silicon switch , 1987 .

[16]  Emil Wolf,et al.  Principles of Optics: Contents , 1999 .

[17]  R. Soref,et al.  Electrooptical effects in silicon , 1987 .

[18]  R. Soref,et al.  All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm , 1986 .

[19]  Nonlinear refraction in silicon induced by one-micron picosecond pulses , 1987 .

[20]  S. Kaneda,et al.  Infra-red light modulator of ridge-type optical waveguide structure using effect of free-carrier absorption , 1986 .

[21]  N. Nilsson,et al.  The influence of auger recombination on the forward characteristic of semiconductor power rectifiers at high current densities , 1973 .

[22]  M. Papuchon,et al.  Low-loss and low-drive-voltage electro-optical phase modulator at 10.6 μm , 1990 .

[23]  F L Thiel,et al.  Optical waveguide cable connection. , 1976, Applied optics.