The effect of annealing temperature on the electronic parameters and carrier transport mechanism of Pt/n-type Ge Schottky diode

[1]  S. Koçyiğit,et al.  On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2% graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure , 2015 .

[2]  I. Uslu,et al.  Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range , 2015 .

[3]  N. Taoka,et al.  Epitaxial formation and electrical properties of Ni germanide/Ge(110) contacts , 2014 .

[4]  Edson R. Leite,et al.  Disorder induced interface states and their influence on the Al/Ge nanowires Schottky devices , 2013 .

[5]  Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes , 2012 .

[6]  F. D. Auret,et al.  Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0) , 2012 .

[7]  Annealing temperature dependency of the electrical and microstructural properties of Ti and Pt contacts to n-type Ge substrates , 2012 .

[8]  N. Kavasoğlu,et al.  I–V–T analysing an inhomogeneous Au/Poly(4-vinyl phenol)/p-Si structure with a double Gaussian distribution of barrier heights , 2011 .

[9]  Ilbilge Dökme,et al.  The analysis of I-V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height , 2011, Microelectron. Reliab..

[10]  U. Aydemir,et al.  The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer , 2010 .

[11]  V. Rajagopal Reddy,et al.  Analysis of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of Ni/Au Schottky contacts on n-type InP , 2010 .

[12]  A. Turut,et al.  Current–voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range , 2010 .

[13]  Kang L. Wang,et al.  Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films , 2010 .

[14]  F. D. Auret,et al.  Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (1 0 0) , 2010 .

[15]  Chel-Jong Choi,et al.  Platinum Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique , 2009 .

[16]  V. R. Reddy,et al.  Effect of annealing temperature on electrical and structural properties of transparent indium tin oxide electrode to n-type GaN , 2009 .

[17]  K. Saraswat,et al.  Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application , 2009 .

[18]  A. Tataroğlu,et al.  On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p-Si (MIS) Schottky diodes , 2008 .

[19]  A. Tataroğlu,et al.  The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2) , 2007 .

[20]  H. B. Yao,et al.  Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge(001) Schottky contacts , 2006 .

[21]  M. Bülbül,et al.  The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer , 2006 .

[22]  F. Yakuphanoglu,et al.  Electronic and interface state density distribution properties of Ag/p-Si Schottky diode , 2005 .

[23]  Charles M. Lieber,et al.  Growth and transport properties of complementary germanium nanowire field-effect transistors , 2004 .

[24]  Qu Xin-ping,et al.  Schottky Barrier Height Inhomogeneity of Ti/n-GaAs Contact Studied by the I-V-T Technique , 2002 .

[25]  Mantu K. Hudait,et al.  Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates , 2001 .

[26]  Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process , 2000 .

[27]  Jinn-Kong Sheu,et al.  Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN , 1998 .

[28]  Subhash Chand,et al.  Current-voltage characteristics and barrier parameters of Pd2Si/p-Si(111) Schottky diodes in a wide temperature range , 1995 .

[29]  K. Sieraňski,et al.  Simple interface-layer model for the nonideal characteristics of the Schottky-barrier diode , 1992 .

[30]  P. Cova,et al.  Temperature dependence of I-V and C-V characteristics of Ni/n-CdF2 Schottky barrier type diodes , 1990 .

[31]  Lun-Lun Chen,et al.  Interfacial reactions of platinum thin films on (111) and (001) germanium , 1988 .

[32]  N. Cheung,et al.  Extraction of Schottky diode parameters from forward current-voltage characteristics , 1986 .

[33]  Leonard J. Brillson,et al.  The structure and properties of metal-semiconductor interfaces , 1982 .

[34]  R. Gutmann,et al.  Interface state density in Au and Al nGaAs Schottky diodes , 1976, 1976 International Electron Devices Meeting.

[35]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .