Kinetics and concentration of active particles in nonequilibrium low temperature methane plasma

[1]  A. A. Davlyatshina,et al.  Electrophysical parameters and composition of HCl-N2 mixture plasmas , 2013 .

[2]  A. Efremov,et al.  The growth kinetics and optical properties of films deposited in methane glow discharge , 2012, High Energy Chemistry.

[3]  V. I. Svetsov,et al.  Influence of addition of Ar and He on the HCl plasma parameters and composition , 2012 .

[4]  M. Mao,et al.  Investigating the plasma chemistry for the synthesis of carbon nanotubes/nanofibres in an inductively coupled plasma enhanced CVD system: the effect of different gas mixtures , 2010 .

[5]  R. Bartali,et al.  Plasma enhanced chemical vapor deposition of a-C:H films in CH4–CO2 plasma: Gas composition and substrate biasing effects on the film structure and growth process , 2008 .

[6]  A. Efremov,et al.  A comparative study of plasma parameters and gas phase compositions in Cl2 and HCl direct current glow discharges , 2008 .

[7]  S. Pearton,et al.  High-density plasma etching of indium–zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries , 2006 .

[8]  F. Ren,et al.  Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO , 2006 .

[9]  T. Grotjohn,et al.  Overview of the different aspects in modelling moderate pressure H2 and H2/CH4 microwave discharges , 2006 .

[10]  D. Gruen,et al.  Synthesis, properties, and applications of ultrananocrystalline diamond , 2005 .

[11]  G. Lombardi,et al.  Modelling of Ar/H 2 /CH 4 Microwave Discharges Used for Nanocrystalline Diamond Growth , 2005 .

[12]  H. K. Kim,et al.  Etching mechanism of a GaN/InGaN/GaN heterostructure in Cl2- and CH4-based inductively coupled plasmas , 2004 .

[13]  Rusli,et al.  Modeling and analysis of hydrogen-methane plasma in electron cyclotron resonance chemical vapor deposition of diamond-like carbon , 2002 .

[14]  C. Eddy,et al.  Characterization of high density CH4/H2/Ar plasmas for compound semiconductor etching , 1999 .

[15]  S. Pearton,et al.  Comparison of inductively coupled plasma Cl2 and Cl4/H2 etching of III-nitrides , 1998 .

[16]  C. Vidal,et al.  Cross sections of the electron impact dissociative ionization of CO, ? and ? , 1998 .

[17]  D. Mary,et al.  RF Plasmas in Methane: Prediction of Plasma Properties and Neutral Radical Densities with Combined Gas-Phase Physics and Chemistry Model , 1995 .

[18]  A. Lichtenberg,et al.  Principles of Plasma Discharges and Materials Processing , 1994 .

[19]  W. Möller.  Plasma and surface modeling of the deposition of hydrogenated carbon films from low-pressure methane plasmas , 1993 .

[20]  V. I. Perel’,et al.  Probe methods in plasma research , 1964 .