1-40-keV fixed-exit monochromator for a wafer mapping TXRF facility

An industrial facility for the mapping of trace impurities on the surface of 300 mm Silicon wafers will be commissioned at the end of 1998. The elements to be detected range from Na to Hg with a target routine detection limit of 108 atoms/cm2. The monochromator of the facility plays a central role and fulfills the following requirements: ease of operations and fast tuning (one single motor); extended energy range (1 - 40 KeV covered by a fixed exit Si(111) channel cut and multilayer pair); smooth and reliable running (water cooling even in the powerful ESRF undulator beams at high energies). The mechanical structure of the monochromator is based on well-established concepts: an external goniometer transfers the main rotation to the in-vacuum plateau via a hollow differentially pumped feed-through. The optical arrangement shows some novelties: the plateau can be cooled either by water or liquid nitrogen and it holds the convex- concave machined Si(111) channel-cut for fixed exit performances. The shape of the machined surfaces of the crystal helps also on to spread the power density of the beam on the silicon surface. A set of two identical multilayers are also mounted on the plateau and the transition from the Si(111) crystal to the multilayer operation is performed by rotating the wafer main axis by about 180 degrees. The whole facility is centered around the three main components: the monochromator, the wafer handling robots and the two linear arrays of solid state fluorescence detectors.