Zirconium silicate films obtained from novel MOCVD precursors

[1]  N. Spencer,et al.  New Single-Source Precursors for the MOCVD of High-κ Dielectric Zirconium Silicates to Replace SiO2 in Semiconducting Devices , 2002 .

[2]  Yoshimichi Ohki,et al.  Plasma-enhanced chemical vapor deposition and characterization of high-permittivity hafnium and zirconium silicate films , 2002 .

[3]  Luigi Colombo,et al.  Application of HfSiON as a gate dielectric material , 2002 .

[4]  P. McIntyre,et al.  Electrical properties of thin film zirconia grown by ultraviolet ozone oxidation , 2002 .

[5]  A. Rotondaro,et al.  Composition control of Hf1−xSixO2 films deposited on Si by chemical-vapor deposition using amide precursors , 2002 .

[6]  John Robertson,et al.  Electronic structure and band offsets of high-dielectric-constant gate oxides , 2002 .

[7]  V. Misra,et al.  Issues in High-ĸ Gate Stack Interfaces , 2002 .

[8]  Darrell G. Schlom,et al.  A Thermodynamic Approach to Selecting Alternative Gate Dielectrics , 2002 .

[9]  J. L. Duggan,et al.  Hafnium interdiffusion studies from hafnium silicate into silicon , 2001 .

[10]  Eduard A. Cartier,et al.  Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition , 2001 .

[11]  K. Starbova,et al.  Structure and properties of nanosized electron beam deposited zirconia thin films , 2001 .

[12]  R. Wallace,et al.  High-κ gate dielectrics: Current status and materials properties considerations , 2001 .

[13]  J. Gupta,et al.  Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxide thickness , 2001 .

[14]  Jeffrey T. Roberts,et al.  Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide , 2000 .

[15]  J. Gottmann,et al.  Pulsed laser deposition of alumina and zirconia thin films on polymers and glass as optical and protective coatings , 1999 .

[16]  N. Spencer,et al.  Composition and Microstructure of Zirconia Films Obtained by MOCVD with a New, Liquid, Mixed Acetylacetonato‐Alcoholato Precursor , 1999 .

[17]  M. Morstein.  VOLATILE ZIRCONIUM BIS(ACETYLACETONATO)BIS(ALCOHOLATO) COMPLEXES CONTAINING HETEROSUBSTITUTED ALCOHOLATO LIGANDS , 1999 .

[18]  D. Schlom,et al.  Thermodynamic stability of binary oxides in contact with silicon , 1996 .

[19]  R. Bunshah.  Handbook of deposition technologies for films and coatings , 1994 .

[20]  D. C. Bradley.  Metal alkoxides as precursors for electronic and ceramic materials , 1989 .

[21]  R. C. Wheland,et al.  Synthesis of substituted 7,7,8,8-tetracyanoquinodimethanes , 1975 .

[22]  R. Martin,et al.  PREPARATION OF CIS-3,4-UREYLENESELENOPHANE , 1975 .