Effects of buffer layer on formation of domain boundaries in epilayer during film growth of GaN by low-pressure metal–organic vapor phase epitaxy on sapphire substrates

Twinning was observed in a GaN buffer layer. The twin boundaries in the buffer layer can extend into the epitaxial layer to form domain boundaries during growth of the epilayer. The domain boundaries, which initiated from the twin boundaries in the buffer layer, are determined to be inversion domain boundaries.

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