High-temperature carrier transport in n-type epitaxial GaAs

Abstract Resistivity and Hall coefficient have been measured in the temperature range 300-1250 K on samples of n -type epitaxial GaAs from which the substrates have been removed to eliminate substrate conduction at high temperatures. These data are useful for determining energy band parameters as well as for modeling epitaxial growth and other high temperature phenomena. The mobilities of electrons in the Γ 6 c minimum and L 6 c minima and the mobility of holes in the Γ 8 v maxima were calculated for the temperature range 300-970 K. From these calculations the mobility in the L 6 c minima was found to decrease faster with increasing temperature than the mobility in the Γ 6 c minimum. Using the temperature dependence of the mobilities, the Γ 6 c − L 6 c − X 6 c ordering of the conduction band minima, and a calculated intrinsic carrier concentration, a self-consistent model for four-band carrier transport was obtained.

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