Temperature dependence of silicon power MOSFETs switching parameters

Purpose – This paper presents measurements of device switching parameters performed on a commercial power MOSFET under high temperature conditions, along with the inverse and direct source‐drain current.Design/methodology/approach – Device temperature was linearly increased from 20 to 300°C. Switching times were measured by monitoring the current waveforms when the device was turned off and on. The gate was biased by a 10 V square signal while a 50 V DC bias was applied between the drain and source. The inverse current was measured under Vg=0V.Findings – The device response to being turned off becomes faster at high temperatures. The inverse leakage current is insignificant under 300°C but it increases rapidly after this limit. The direct saturation current increases with temperature for the same gate tension. These phenomena were associated to the thermal activation of defects.Originality/value – This paper offers information about switching performance of low cost commercial MOS devices in high temperat...