New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs

The kink effect in InAlAs/InGaAs/InP composite channel heterojunction field effect transistors (HFETs) was investigated as a function of temperature and optical excitation. Drain source and gate current measurements show that above 325 K the kink effect disappears while the impact ionization process is still present. The kink at low temperatures is suppressed by illumination with photons of energy above 1 eV. These results prove that this parasitic effect is mainly related to the presence of traps in the top layers.

[1]  A. Souifi,et al.  A slow-trap model for the kink effect on InAlAs/InP HFET , 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

[2]  T. Enoki,et al.  Design and characteristics of InGaAs/InP composite-channel HFET's , 1995 .

[3]  G. Ng,et al.  Suppression of I-V kink in doped channel InAlAs/InGaAs/InP heterojunction field-effect transistor (HFET) using silicon nitride passivation , 1996 .

[4]  T. Enoki,et al.  Kink modification using body contact bias in InP based InAlAs/InGaAs HEMTs , 1996 .

[5]  Ferrite Substrate.  AlInAs-GaInAs HEMT's Utilizing Low -Temperature AlInAs Buffers Grown by MBE , 1989 .

[6]  J.A. del Alamo,et al.  Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs , 1996, IEEE Electron Device Letters.

[7]  J.A. del Alamo,et al.  A new physical model for the kink effect on InAlAs/InGaAs HEMTs , 1995, Proceedings of International Electron Devices Meeting.

[8]  U. Mishra,et al.  AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE , 1989, IEEE Electron Device Letters.

[9]  T. Enoki,et al.  InGaAs/InP double channel HEMT on InP , 1992, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.

[10]  G. Post,et al.  A study of buffer layers in a double channel InP-HFET structure , 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

[11]  P. Tasker,et al.  dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation‐doped field‐effect transistors , 1989 .

[12]  T. Zimmer,et al.  Kink effect in HEMT structures: A trap-related semi-quantitative model and an empirical approach for spice simulation , 1992 .

[13]  J.A. del Alamo,et al.  Impact ionization in InAlAs/InGaAs HFET's , 1994, IEEE Electron Device Letters.