论文信息 - GaN/SiC avalanche photodiodes

GaN/SiC avalanche photodiodes

Near ultraviolet-sensitive separate absorption and multiplication avalanche photodiodes with GaN/SiC epitaxial layers grown on SiC substrate were fabricated. Dark current < 1 pA at 90% breakdown voltage, maximum multiplication gain of ∼105, and responsivity exceeding 4.2 A/W at 365 nm were achieved.

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