Ultra-low power electronics with Si/Ge tunnel FET

Si/Ge Tunnel FET (TFET) with its subthermal subthreshold swing is attractive for low power analog and digital designs. Greater Ion/Ioff ratio of TFET can reduce the dynamic power in digital designs, while higher gm/IDS can lower the bias power of analog amplifier. However, the above benefits of TFET are eclipsed by MOSFET at a higher power/performance point. Ultra low power scalability of the key analog and digital circuits, SRAM and operational transconductance amplifier (OTA), with TFET is demonstrated. Analyzing a TFET based cellular neural network, this work shows the feasibility of ultra-low-power neuromorphic computing with TFET.

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