论文信息 - Bismuth containing III–V quaternary alloy InGaAsBi grown by MBE

Bismuth containing III–V quaternary alloy InGaAsBi grown by MBE

InGaAsBi epilayers were created on InP substrates by molecular beam epitaxy for the first time. The high crystalline quality of the InGaAsBi epilayer with smooth interface was confirmed by high resolution X‐ray diffraction measurements. Up to 2.5% Bi was incorporated in the film based on Rutherford back scattering (RBS) results. The RBS channeling spectra give clear evidence that the Bi atoms were substitutionally located in the InGaAs zinc‐blende lattice sites. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

K. Oe | M. Yoshimoto | G. Feng

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