Single and Double Variant Cupt-B Ordered GalnAs

Nominally lattice-matched GaInAs layers grown by metal organic vapor phase epitaxy on InP substrates have been studied using high-resolution x-ray diffraction (HRXRD) to determine the growth conditions under which ordering is introduced. HRXRD provides an independent means to quantify the order parameter of semiconductor heterostructures as well as the ordering on different {111} planes, i.e., double variant ordering. This independent means to determine ordering provides for a better understanding of the effects of ordering on the electronic and optical properties. Double variant ordering was observed for epitaxial layers grown on exact (001) InP substrates, with an order parameter of about 0.1 in both variants. For substrates that were miscut by 6 degrees, single variant ordering was detected. In these cases, an order parameter as high as 0.66 was measured for certain growth conditions. The layers grown on vicinal substrates are all of high crystalline quality, those on (001) substrates exhibit some mosaic spread.

[1]  D. Arent,et al.  Atomic ordering and temperature-dependent transient photoconductivity in Ga0.47In0.53As , 1999 .

[2]  J. Olson,et al.  X-RAY DIFFRACTION AND EXCITATION PHOTOLUMINESCENCE ANALYSIS OF ORDERED GAINP , 1998 .

[3]  C. Shih,et al.  Alloy ordering in GaInP alloys: A cross-sectional scanning tunneling microscopy study , 1998 .

[4]  G. B. Stringfellow.  Order and Surface Processes in III–V Semiconductor Alloys , 1997 .

[5]  D. Arent,et al.  Carrier transport in ordered and disordered In0.53Ga0.47As , 1997 .

[6]  W. Prost,et al.  Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence , 1997 .

[7]  Lianmao Peng,et al.  Debye–Waller Factors and Absorptive Scattering Factors of Elemental Crystals , 1996 .

[8]  Giso Hahn,et al.  Influence of domain size on optical properties of ordered GaInP2 , 1996 .

[9]  Ferdinand Scholz,et al.  Band‐gap reduction and valence‐band splitting of ordered GaInP2 , 1995 .

[10]  A. Gomyo,et al.  Effects of substrate misorientation on triple-period ordering in AlInAs , 1995 .

[11]  T. Seong,et al.  Atomic ordering and domain structures in metal organic chemical vapor deposition grown InGaAs (001) layers , 1994 .

[12]  G. B. Stringfellow,et al.  Effects of substrate misorientation and growth rate on ordering in GaInP , 1994 .

[13]  B. Warren,et al.  X-Ray Diffraction , 2014 .

[14]  G. D. Rieck,et al.  International tables for X-ray crystallography , 1962 .