Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate
暂无分享,去创建一个
J. S. Wallace | U. Singisetti | A. Goyal | K. Sasaki | J. Poplawsky | B. Mazumder | A. Kuramata | J. A. Gardella | Jith Sarker | Yi Zhang | Abhishek Vaidya | Lauren Lubecki