Explaining the amplitude of RTS noise in submicrometer MOSFETs

A simple-man's model for the random telegraph signal (RTS) noise amplitude in a submicrometer MOSFET is presented. It is shown that the channel resistance modulation for a specific trap can be expressed as a product of the normalized scattering cross section and of the fractional conductivity change. The model qualitatively describes the experimental temperature and drain current dependence of the RTS amplitude and allows evaluation of the influence of the trap location and nature on the wide scatter in values observed. >

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