Fabrication of quantum well wires and vertical quantum wells on submicron gratings by MOVPE

The fabrication of quantum well wires (QWWs) by overgrowing submicron gratings is reviewed. The advantages of one-dimensional semiconductor structures have already been understood for some time and are expected to alter laser performances, such as extremely low threshold currents, very high modulation bandwidths, very low temperature dependence. The realization of the nanostructures, however, has set some major demands on crystal growth. The MOVPE growth on submicron gratings (etched in a GaAs substrate) has become one of the most successful techniques and is studied in this paper. Vertical ‘quantum wells’ (VQWS) (formed during growth of bulk AlxGa1-xAs on gratings) are also studied and a new fabrication technique for QWW lasers is proposed. Finally the application of QWWs and VQWs is discussed for the realization of Fabry-Perot and distributed feedback laser diodes.

[1]  P. Demeester,et al.  Anisotropic photoluminescence behaviour of vertical AlGaAs structures grown on gratings , 1992 .

[2]  Walther,et al.  Observation of electronic subbands in dense arrays of quantum wires grown by organometallic-chemical-vapor deposition on nonplanar substrates. , 1992, Physical review. B, Condensed matter.

[3]  Eli Kapon,et al.  Quantum wire lasers , 1992, Proc. IEEE.

[4]  E. Kapon,et al.  Vertically-stacked multiple quantum wire semiconductor lasers , 1990, 12th IEEE International Conference on Semiconductor Laser.

[5]  Henry I. Smith,et al.  Patterning and overgrowth of nanostructure quantum well wire arrays by LP-MOVPE , 1990 .

[6]  E. Kapon,et al.  Threshold current reduction in patterned quantum well semiconductor lasers grown by molecular beam epitaxy , 1990 .

[7]  K. Kyuma,et al.  Fabrication and characterization of quantum well wires grown on corrugated GaAs substrates by molecular beam epitaxy , 1990 .

[8]  E. Kapon,et al.  Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces , 1989 .

[9]  T. Fukui,et al.  New GaAs quantum wires on , 1989 .

[10]  Gaines,et al.  Optical anisotropy in a quantum-well-wire array with two-dimensional quantum confinement. , 1989, Physical review letters.

[11]  Amnon Yariv,et al.  Scaling laws and minimum threshold currents for quantum-confined semiconductor lasers , 1988 .

[12]  T. Fukui,et al.  (AlAs)0.5(GaAs)0.5 fractional‐layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor deposition , 1987 .

[13]  R. Blondeau,et al.  A study of the orientation dependence of Ga(Al)As growth by MOVPE , 1986 .

[14]  Yasuhiko Arakawa,et al.  Quantum noise and dynamics in quantum well and quantum wire lasers , 1984 .

[15]  W. Wiegmann,et al.  Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy , 1984 .

[16]  H. Sakaki,et al.  Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .

[17]  Hiroyuki Sakaki,et al.  Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures , 1980 .

[18]  Yasuhiko Arakawa,et al.  Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal‐organic chemical‐vapor deposition , 1992 .

[19]  Y. Arakawa.  Quantum Well Lasers , 1992 .

[20]  Y. Galeuchet.  Metalorganic vapor-phase epitaxy on patterned substrates for the fabrication of in-situ-buried GaxIn1-xAs/InP nanostructures , 1991 .

[21]  C. Weisbuch,et al.  On the Impact of Low-Dimensionality in Quantum-Well, Wire, Dot-Semiconductor Lasers , 1990 .

[22]  E. Kapon,et al.  Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasers , 1988 .