Thin films of ReBaCuO (Re=Y, Gd) and of BiCaSrCuO have been deposited onto A12O3, MgO, SrTiO3, Si and ZrO2 substrates by planar and inverted cylindrical magnetron sputtering. The main advantage of this preparation technique is the high reproducibility allowing detailed and systematic studies of the film properties as a function of deposition parameters. Optimum deposition parameters were a high oxygen partial pressure of 2×10−1 Torr in an oxygen-argon mixture and substrate temperatures near 800°C. Except for the substrate Si the films grow highly textured on all substrates. For the 1–2–3 material zero resistance is obtained near 90 K for the case of textured growth. For Si the best film showed zero resistance near 84 K. High critical currents between 4×105 and 5.5×106A/cm2 were determined for films of the 1–2–3 material on the substrates MgO, ZrO2 and SrTiO3. On films SrTio3 tunnel junctions with Pb and In counterelectrodes could be prepared which showed a gap-like feature in their current-voltage characteristic. These junctions could be prepared with great reproducibility and experimental arguments could be provided which show that this gap-like feature is due to a superconducting density of states effect. Finally, first results are presented on YBaCuO thin films which were deposited by a novel ablation device which uses a pulsed electron beam instead of the laser beam.