Impact of Single Event Gate Rupture and Latent Defects on Power MOSFETs Switching Operation
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F. Wrobel | N. Chatry | R. Arinero | F. Forest | S. Bourdarie | F. Saigné | A. Privat | N. Chatry | E. Lorfèvre | F. Wrobel | F. Saigné | A. Touboul | J. Vaillé | S. Bourdarie | R. Arinero | A. D. Touboul | M. Petit | J. J. Huselstein | J. R. Vaillé | G. Chaumont | E. Lorfèvre | A. Privat | G. Chaumont | F. Forest | J. Huselstein | M. Petit
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