Transient evolution of surface roughness on patterned GaAs(001) during homoepitaxial growth.

We have investigated the length scale dependence of the transient evolution of surface roughness during homoepitaxial growth on GaAs(100), patterning the surface lithographically with an array of cylindrical pits of systematically varied sizes and spacings. Our atomic force microscopy measurements show that the amplitude of the surface corrugation has nonmonotonic behavior in both the length scale dependence and time evolution. This behavior allows us to rule out a number of existing continuum models of growth.

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