论文信息 - Resonant tunneling in AlSb‐GaSb‐AlSb and AlSb‐InGaSb‐AlSb double barrier heterostructures

Resonant tunneling in AlSb‐GaSb‐AlSb and AlSb‐InGaSb‐AlSb double barrier heterostructures

We report the resonant tunneling of electrons in AlSb‐GaSb‐AlSb and AlSb‐InGaSb‐AlSb double barrier heterostructures grown on different substrate orientations. We have investigated the dependence of the current voltage characteristic on barrier and well thicknesses, as well as on temperature. Resonant tunneling peak to valley (P/V) ratios of 7.6 (GaSb well) and 8.7 (InGaSb well) at 80 K have been obtained. We also report the observation of a second negative differential resistance (NDR) region with an anomalous temperature dependence, and give an experimental estimation of the band alignment in the strained GaSb/InGaSb system based on the variation of the NDR position in the tunneling structures.

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