Full-Circuit Design Optimization of a RF Silicon Integrated Passive Device

A schematic-electromagnetic (EM) hybrid optimization scheme was used to design an integrated passive device (IPD)-diplexer. The method uses component values derived from circuit simulation and optimization to determine physical design changes. The diplexer was fabricated in a silicon wafer process. The small form-factor (2.6 times 1.3 times 0.25 mm3) of this device makes it very attractive for system in package (SiP) applications. Simulated and measured results show good agreement

[1]  E. Beyne,et al.  Integrated microwave filters in MCM-D , 1996, Proceedings 1996 IEEE Multi-Chip Module Conference (Cat. No.96CH35893).

[2]  David E. Long,et al.  Large-scale full-wave simulation , 2004, Proceedings. 41st Design Automation Conference, 2004..

[3]  J. Hartung,et al.  High Q inductors for MCM-Si technology , 1997, Proceedings 1997 IEEE Multi-Chip Module Conference.

[4]  Robert C. Frye,et al.  Silicon-on-silicon MCMs with integrated passive components , 1992, Proceedings 1992 IEEE Multi-Chip Module Conference MCMC-92.