Performance simulations of p-i-n and MSM detectors

We propose a model for III-V compound PIN and MSM detectors which is both physically realistic and easily modifiable. The complete model consists of two components: the physical and circuit model. In the physical model an intrinsic device is simulated by solving Poisson's equation, the current continuity equations, and a rate equation for charged traps using MATHEMATICA. Carrier injection, charge-storage effects and fringing electric fields are also taken into account. The results can be presented either in the time or the frequency domain. These results are used to determine the parameters of a circuit model for an intrinsic device. Our circuit model was specifically designed to include all the above mentioned effects. The model was tested by simulating the performance of PIN detectors with various geometries in both SPICE and MDS. Agreement between the measured data and the simulated results was remarkable good.