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An 8ns Battery Back-Up Submicron Bicmos 256k Ecl Sram

Hiep V. Tran | Kuen Fung | A. H. Shah | D. B. Scott | R. E. Eklund | T. E. Ham | R. Havemann | R. A. Haken

[1] H. Shinohara,et al. A divided word-line structure in the static RAM and its application to a 64K full CMOS RAM , 1983, IEEE Journal of Solid-State Circuits.