A 26.5-40.0 GHz GaAs FET Amplifier

Sub-half-micron gate GaAs FET's have been used to fabricate a MIC balanced amplifier module with 4.2 dB of minimum gain over 26.5-40.0 GHz. The module and devices are described and data is presented for gain, VSWR, noise figure, and power on the module.

[1]  R. Anderson,et al.  Sub-Half-Micron GaAs FETS for Applications Through K Band , 1981, 1981 IEEE MTT-S International Microwave Symposium Digest.