Computer-aided design of communication networks [Book Review]

IMMERSION ION IMPLANTATION AND DEPOSITION Edited by Andre Anders. John Wiley and Sons, 2000. Material research and development is most basic for industrial progress. Conventional ion implantation has been around for years in the semiconductor industry for doping of wafers and in material processing for surface treatment to synthesize alloys to improve the wear and corrosion resistance, such as with diamond-like carbon coatings. The implantation cross section is usually small. One of the emerging technologies is plasma immersion ion implantation (PIII), with the part to be implanted immersed in the processing plasma and with very high negative voltage pulses applied to it in order to form a uniform electric (plasma) sheath between the part and the plasma. Ions in or entering the sheath from the plasma side are accelerated by the electric field of the sheath and implanted onto the part. This field of processing of material has seen incredible speed of progress. For example, the electric, magnetic, and optical properties of materials can be improved by ion-implanted thin coatings, and the mechanical and chemical performances of many medical and dental products have been improved in their wear and corrosion features by ion implanted coatings. This handbook is an effort of producing an up-to-date monograph by 29 contributors in this field. The book has 11 chapters. Chapter 1 (pp. 1-26) gives an elementary historical review of plasma processing. The main text of the book is composed of three parts: Part I, including chapters 2 to 5 (pp. 29-339), covers the fundamentals of plasmas and sheath in Chapter 2, pp. 29-123, and ion implantation and thin-film deposition in Chapter 3, pp. 125-241. Chapter 4 (pp. 243-301) starts the main theme of this book on plasma immersion ion implantation and deposition (PIII & D), and Chapter 5 (pp. 303-339) reviews the material characterization and testing methods. Part II, including chapters 7 to 9 (pp. 343-660), covers more details on the technology of PIII & D. Part III (pp. 553-681) covers the nonsemiconductor (Chapter 10) and semiconductor (Chapter 11) applications of PIII & D. Every chapter has a very comprehensive list of references. There are four appendices (pp. 683-725) and an index (pp. 727-738) at the end of the book. This book is very nicely organized and very readable. The first three chapters give a very extensive review on the fundamentals of plasma for those readers not very familiar with the subject. Readers who are familiar with plasma processing may skip the first three chapters and go straight to Chapter 4 for more details on the treatment of the various topics. This handbook should be very useful to scientists working in research laboratories and engineers in industry working on material processing in many different fields. It should be pointed out that the equipment used in PIII & D in industry often has a huge vacuum chamber with very high-voltage power supplies having hundreds of kilovolts and attached with many computer-controlled instruments for controls and monitoring, etc. This book has a chapter (5) on material testing and a chapter (9) on health and safety issues. The long lists of references attached to every chapter can also be very helpful for searching for more details in various special topics. For example, in Chapter 4, there are sections on implantation in pips and holes and implantat ion on nonconducting materials such as organic polymers, which may become very important for future developments of photonic and semiconductor materials and devices (see sections 11.3, 11.4, and 11.5).