An FPGA-based single-phase interleaved boost-type PFC converter employing GaN HEMT devices

The recent development of higher blocking voltage gallium nitride (GaN) power FETs has the potential to enhance the power density of future power electronic converters. In this work, GaN devices are used to assemble a 100 W single-phase two-channel interleaved boost-type power factor correction (PFC) converter. The constructed hardware is able to operate with a switching frequency up to 1 MHz per channel, and hence a 2 MHz effective ripple frequency at the input and output terminals of the interleaved system. Furthermore, in order to cope with the high frequency requirements an average current mode control strategy is implemented in an FPGA device. Finally, the experimental results shown attest the feasibility of the developed digital feedback control scheme and laboratory prototype.

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