InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs‐coated Si by molecular beam epitaxy

We report on the first InAs0.85Sb0.15 infrared photodiodes, grown on GaAs and GaAs‐coated Si substrates by molecular beam epitaxy. Transmission electron microscopy images reveal a good structural quality. The electrical characteristics of the photodiodes were analyzed using current‐voltage, current‐temperature, and capacitance‐voltage measurements. The spectral response and detector noise were measured at 77 K, resulting in a peak detectivity at 3.8 μm of 1.5×1011 cm Hz1/2/W for InAs0.85Sb0.15/GaAs and 5.0×1010 cm Hz1/2/W for InAs0.85Sb0.15/GaAs/Si.

[1]  Salah M. Bedair,et al.  p-n junction formation in InSb and InAs(1-x)Sb(x) by metalorganic chemical vapor deposition , 1985 .

[2]  J. Chyi,et al.  Molecular beam epitaxial growth and characterization of InSb on Si , 1989 .

[3]  L. R. Dawson,et al.  Demonstration of an InAsSb strained‐layer superlattice photodiode , 1988 .

[4]  F. Nabarro,et al.  Dislocations in solids , 1979 .

[5]  R. Mertens,et al.  Optical characterization of Si‐doped InAs1−xSbx grown on GaAs and GaAs‐coated Si by molecular‐beam epitaxy , 1991 .

[6]  Kiely,et al.  Energetics of misfit- and threading-dislocation arrays in heteroepitaxial films. , 1991, Physical review. B, Condensed matter.

[7]  F. Capasso,et al.  High-detectivity InAs 0.85 Sb 0.15 /InAs infra-red (1.8-4.8 μm) detectors , 1986 .

[8]  L. O. Bubulac,et al.  Backside-illuminated InAsSb/GaSb broadband detectors , 1980 .

[9]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[10]  InAs p‐n diodes grown on GaAs and GaAs‐coated Si by molecular beam epitaxy , 1992 .

[11]  T. E. Zipperian,et al.  High-detectivity (>1*10/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detector , 1990, IEEE Electron Device Letters.

[12]  Growth and optical characterization of InAs1−xSbx(0≤x≤1) on GaAs and on GaAs‐coated Si by molecular beam epitaxy , 1989 .

[13]  J. G. Pasko,et al.  Backside-illuminated InAs/1-x/Sb/x/-InAs narrow-band photodetectors , 1977 .

[14]  Antoni Rogalski,et al.  InAs1−xSbx infrared detectors , 1989 .