论文信息 - Variation of semiconductor properties through the SiOx region of Si SiO2 interfaces - 字舞流文

Variation of semiconductor properties through the SiOx region of Si SiO2 interfaces

[1] K. Hübner. Energy-gap variation at the Si-SiOx–SiO2 interface , 1979 .

[2] K. Hübner,et al. Statistical investigations of the structure of SiOx , 1979 .

[3] K. Hübner. Chemical bond and related properties of SiO2 VI. electronic structure of SiOx , 1979 .

[4] K. Hübner. Chemical bond and related properties of SiO2 III. Core‐level shifts in SiOx , 1977 .

[5] F. Bechstdt. Chemical shift of Si 2p core level in SiOx calculation of relaxation contribution , 1979 .