Mapping of Bragg-surface diffraction of InP/GaAs(1 0 0) structure

Abstract InP/GaAs(1 0 0) heterostructures grown by gas-source molecular-beam epitaxy were analyzed using three-beam bragg-surface diffraction (BSD) of the X-ray multiple diffraction (MD) phenomenon. The angular MD condition is scanned by varying both, the ω incidence angle and the φ rotation angle around [1 0 0] in order to provide the mapping of this condition. From the two-dimensional mapping – ω : φ scan, the crystalline perfection (mosaic spread) parallel (ηφ) and perpendicular (ηω) to the growth direction can be investigated along the layer surface and the substrate interface. The ω:φ scan of the 0 0 0, 2 0 0, 1 1 1 BSD is used to analyze the growth processing and post-growth annealing of InP/GaAs samples. The effect of various defect-reduction tools on layer and substrate crystal quality is also investigated.