Plasma wave FET for sub-wavelength THz imaging

In this paper, the image of the transistor responsivity pattern is recorded as a dependence of the drain- to- source voltage, induced by the THz laser radiation versus the displacement of the transistor in perpendicular plane in respect to the laser beam. The micrometer scale and even nanometer scale resolution imaging can be achieved with the field effect transistor operating in a plasma wave detector mode by changing drain and gate biases. This paper reports on the first ever THz imaging employing plasma wave field-effect transistors FET, unlike references reporting on THz sensing.