Multilevel RTS in Proton Irradiated CMOS Image Sensors Manufactured in a Deep Submicron Technology

A new automated method able to detect multilevel random telegraph signals (RTS) in pixel arrays and to extract their main characteristics is presented. The proposed method is applied to several proton irradiated pixel arrays manufactured using a 0.18 mum CMOS process dedicated to imaging. Despite the large proton energy range and the large fluence range used, similar exponential RTS amplitude distributions are observed. A mean maximum amplitude independent of displacement damage dose is extracted from these distributions and the number of RTS defects appears to scale well with total nonionizing energy loss. These conclusions allow the prediction of RTS amplitude distributions. The effect of electric field on RTS amplitude is also studied and no significant relation between applied bias and RTS amplitude is observed.

[1]  G. Hopkinson.  Radiation effects in a CMOS active pixel sensor , 2000 .

[2]  Cheryl J. Dale,et al.  Proton-induced displacement damage distributions and extremes in silicon microvolumes charge injection device , 1990 .

[3]  Cheryl J. Dale,et al.  A comparison of Monte Carlo and analytic treatments of displacement damage in Si microvolumes , 1994 .

[4]  G. Jung,et al.  Random telegraph noise analysis in time domain , 2000 .

[5]  W. Read,et al.  Statistics of the Recombinations of Holes and Electrons , 1952 .

[6]  G. R. Hopkinson,et al.  Further measurements of random telegraph signals in proton irradiated CCDs , 1995 .

[7]  Abbas El Gamal,et al.  Analysis of temporal noise in CMOS photodiode active pixel sensor , 2001, IEEE J. Solid State Circuits.

[8]  O. Gilard,et al.  Annealing of Proton-Induced Random Telegraph Signal in CCDs , 2007, IEEE Transactions on Nuclear Science.

[9]  B. Dierickx,et al.  Random telegraph signals in a radiation-hardened CMOS active pixel sensor , 2002 .

[10]  A. Mohammadzadeh,et al.  Random Telegraph Signals in Proton Irradiated CCDs and APS , 2007, IEEE Transactions on Nuclear Science.

[11]  Cheryl J. Dale,et al.  Displacement damage extremes in silicon depletion regions , 1989 .

[12]  Guang Yang,et al.  An enhanced-performance CMOS imager with a flushed-reset photodiode pixel , 2003 .

[13]  Arkadiusz Szewczyk,et al.  A New Method for RTS Noise of Semiconductor Devices Identification , 2008, IEEE Transactions on Instrumentation and Measurement.

[14]  G. R. Hopkinson,et al.  Random telegraph signals from proton-irradiated CCDs , 1993 .

[15]  J. R. Srour,et al.  Amorphous Inclusions in Irradiated Silicon and Their Effects on Material and Device Properties , 2008, IEEE Transactions on Nuclear Science.

[16]  K. Ng,et al.  The Physics of Semiconductor Devices , 2019, Springer Proceedings in Physics.

[17]  D. Schroder.  Semiconductor Material and Device Characterization , 1990 .

[18]  Andrew D. Holland,et al.  Random telegraph signals in charge coupled devices , 2004 .

[19]  M. S. Robbins,et al.  High-energy proton-induced dark signal in silicon charge coupled devices , 2000 .

[20]  O. Gilard,et al.  Measurements of Random Telegraph Signal in CCDs Irradiated with Protons and Neutrons , 2005, 2005 8th European Conference on Radiation and Its Effects on Components and Systems.

[21]  G. Vincent,et al.  Electric field effect on the thermal emission of traps in semiconductor junctions , 1979 .

[22]  A. Czerwiński.  Defect-related local-electric-field impact on p–n junction parameters , 1999 .

[23]  A. M. Chugg,et al.  Single particle dark current spikes induced in CCDs by high energy neutrons , 2003 .

[24]  S. Watts,et al.  A new model for generation-recombination in silicon depletion regions after neutron irradiation , 1996 .