Current measurement system utilizing cryogenic techniques for the absolute measurement of the magnetic flux quantum

A series of systems composed of cryogenic devices such as a Josephson potentiometer and a cryogenic current comparator, developed to precisely measure a current with any value up to 1 A, is proposed. These systems will be used to measure the injected electrical energy with an uncertainty of the order of 0.01 p.p.m. or less in the absolute measurement of the magnetic flux quantum by superconducting magnetic levitation. Some preliminary experiments are described. >

[1]  Peter Warnecke,et al.  High-precision resistance ratio measurements by means of a novel Josephson potentiometer , 1987, IEEE Transactions on Instrumentation and Measurement.

[2]  P Giacomo News from the BIPM , 1980 .

[3]  I. K. Harvey A Precise Low Temperature dc Ratio Transformer , 1972 .

[4]  Dominique Reymann,et al.  Progress in Resistance Ratio Measurements Using a Cryogenic Current Comparator at LCIE , 1985, IEEE Transactions on Instrumentation and Measurement.

[5]  Ronald F. Dziuba,et al.  Low temperature direct current comparators , 1974 .

[6]  F. Shiota,et al.  A study of a superconducting magnetic levitation system for an absolute determination of the magnetic flux quantum , 1987, IEEE Transactions on Instrumentation and Measurement.

[7]  J. Tsai,et al.  High-precision test of the universality of the josephson voltage-frequency relation , 1983 .

[8]  Tadashi Endo,et al.  Measurement System for Quantum Hall Effect Utilizing a Josephson Potentiometer , 1985, IEEE Transactions on Instrumentation and Measurement.

[9]  D. J. Legg,et al.  The relationship between the SI Ohm, the Ohm at NPL, and the quantized Hall resistance , 1987, IEEE Transactions on Instrumentation and Measurement.

[10]  T. J. Witt,et al.  The realization of the quantum Hall standard of resistance at the BIPM , 1987, IEEE Transactions on Instrumentation and Measurement.

[11]  Manijeh Razeghi,et al.  Precise Quantized Hall Resistance Measurements in GaAs/AlxGa1-xAs and InxGa1-xAs/InP Heterostructures , 1986 .