Germanium is increasingly being studied for application in advanced nanoelectronic devices, due to its high intrinsic carrier mobility. While broad knowledge and understanding of in-situ doping of Si is available, very little is known on in-situ doping of Ge. Phosphorus has been identified as one of the most promising n-type dopants for Ge, because of its high electrical activity. However, studies of the quality of ion-implanted P-doped Ge layers showed unsatisfactory behavior. A considerable difference between the levels of the electrical solubility and equilibrium solid solubility of P in Ge has been reported. The highest electrically active level of ionimplanted P in Ge reported to date is of 5-6×10 cm. The interest in in-situ doping of Ge was triggered by the possibility of increasing the electrically active levels obtained for n-type dopants at the same time as having better control over the shape of the dopant profile and its location. We present the first results on in-situ P doping of Ge by APCVD.