Machine learning technique based extremely broadband small‐signal behavioral model for InP DHBTs
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Jun Liu | Jialin Cai | Justin B. King | Lingling Sun | Justin King | Lingling Sun | Jialin Cai | Jun Liu | J. King
[1] A. Bouallegue,et al. Small-signal modeling of HBTs using a hybrid optimization/statistical technique , 1998 .
[2] S. Bahl,et al. An accurate, large signal, high frequency model for GaAs HBTs , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.
[3] Lingling Sun,et al. A Global Modeling Technique for InP HBT Based on Machine Learning Method , 2018, 2018 Asia-Pacific Microwave Conference (APMC).
[4] Bumman Kim,et al. Direct parameter extraction of SiGe HBTs for the VBIC bipolar compact model , 2005 .
[5] Sonja R. Nedeljkovic,et al. A Custom Iii-v Heterojunction Bipolar Transistor Model , 2009 .
[6] Antonio Raffo,et al. An Extensive Experimental Analysis of the Kink Effects in ${ S}_{22}$ and ${ h}_{21}$ for a GaN HEMT , 2014, IEEE Transactions on Microwave Theory and Techniques.
[7] W. Deal,et al. First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process , 2015, IEEE Electron Device Letters.
[8] Antonio Raffo,et al. Kink Effect in ${\rm S}_{22}$ for GaN and GaAs HEMTs , 2015, IEEE Microwave and Wireless Components Letters.
[9] H. C. Poon,et al. An integral charge control model of bipolar transistors , 1970, Bell Syst. Tech. J..
[10] A. Konczykowska,et al. Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models , 2011, IEEE Transactions on Electron Devices.
[11] F.M. Ghannouchi,et al. Dynamic behavioral modeling of 3G power amplifiers using real-valued time-delay neural networks , 2004, IEEE Transactions on Microwave Theory and Techniques.
[12] Wen Wu,et al. An Artificial Neural Network-Based Electrothermal Model for GaN HEMTs With Dynamic Trapping Effects Consideration , 2016, IEEE Transactions on Microwave Theory and Techniques.
[13] H. Zirath,et al. An empirical-table based FET model , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
[14] Michael Schroter,et al. Staying current with HICUM , 2002 .
[15] Jin Zhi,et al. A Physics-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect , 2009 .
[16] Wei Cheng,et al. Extraction and verification of the small-signal model for InP DHBTs in the 0.2-325 GHz frequency range , 2018, IEICE Electron. Express.
[17] Xiaochong Cao,et al. Comparison of the new VBIC and conventional Gummel-Poon bipolar transistor models , 2000 .
[18] Christian P. Robert,et al. Bayesian computation for statistical models with intractable normalizing constants , 2008, 0804.3152.
[19] P. Asbeck,et al. Large-signal HBT model with improved collector transit time formulation for GaAs and InP technologies , 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.
[20] Wei Cheng,et al. Measurement and modeling techniques for InP-based HBT devices to 220GHz , 2016, 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
[21] Jianjun Xu,et al. Global dynamic FET model for GaN transistors: DynaFET model validation and comparison to locally tuned models , 2014, 83rd ARFTG Microwave Measurement Conference.
[22] D. Williams. De-embedding and unterminating microwave fixtures with nonlinear least squares , 1990 .
[23] W. Heinrich,et al. InP-DHBT-on-BiCMOS Technology With $f_{T}/f_{\max}$ of 400/350 GHz for Heterogeneous Integrated Millimeter-Wave Sources , 2013, IEEE Transactions on Electron Devices.
[24] King-Sun Fu,et al. Pattern Recognition and Machine Learning , 2012 .
[25] Wei Zhou,et al. An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction , 2015, IEEE Transactions on Microwave Theory and Techniques.
[26] José Carlos Pedro,et al. A new nonlinear behavioral modeling technique for RF power transistors based on Bayesian inference , 2017, 2017 IEEE MTT-S International Microwave Symposium (IMS).
[27] Shey-Shi Lu,et al. The origin of the kink phenomenon of transistor scattering parameter S/sub 22/ , 2001 .
[28] Wei Cheng,et al. Fabrication and small signal modeling of 0.5 μm InGaAs/InP DHBT demonstrating FT/Fmax of 350/532 GHz , 2015 .
[29] K. Cimino,et al. 300 GHz InP DHBT large signal model including current blocking effect and validated by Gilbert multiplier circuits , 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..
[30] Dominique Schreurs,et al. On the small signal modeling of advanced microwave FETs: A comparative study , 2008 .
[31] Wei Cheng,et al. Broadband modeling for InP DHBT over 0.2 – 220 GHz , 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
[32] F.M. Ghannouchi,et al. Systematic and rigorous extraction method of HBT small-signal model parameters , 2006, IEEE Transactions on Microwave Theory and Techniques.
[33] E. Paleczny,et al. Multimode TRL. A new concept in microwave measurements: theory and experimental verification , 1998 .
[34] Ren Kun,et al. Frequency stability of InP HBT over 0.2 to 220 GHz , 2015 .
[35] Z. Griffith,et al. A 130 nm InP HBT integrated circuit technology for THz electronics , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).
[36] M. Cacciola,et al. Microwave Devices and Antennas Modelling by Support Vector Regression Machines , 2006, IEEE Transactions on Magnetics.
[37] D. Smith,et al. Compact Electro-thermal Modelling and Simulation of InP HBT Based on the Local Reference Concept , 2006, 2006 European Microwave Integrated Circuits Conference.