High-performance photodetectors based on CVD-grown high-quality SnS2 nanosheets

Abstract2D layered SnS2 nanosheets have attracted significant attention owing to their excellent electronic and optoelectronic properties and thus becoming the potential candidates for versatile applications. Here, a micro-environmental controlled chemical vapor deposition technique was provided to synthesis the high-quality hexagonal SnS2 nanosheets which were characterized by field-emission scanning electron microscopy, confocal Raman system, X-ray diffraction, time-resolved photoluminescence, atomic force microscope, and transmission electron microscopy measurements in structural and optical properties. The as-fabricated photodetectors (under 365 nm at room temperature) based on SnS2 flakes exhibited a remarkable photoresponsivity of 1.1 × 103 A W−1, an excellent external quantum efficiency of 3.2 × 105%, and a fast response time of 40 ms at room temperature, which shows better performance than reported photodetectors based on other analogous 2D materials and even their monolayer counterparts. The results indicate that SnS2 nanosheets are very promising potential candidates in nanoscale electronic and optoelectronic devices.

[1]  Y. Takahashi,et al.  Photoconductivity of Ultrathin Zinc Oxide Films , 1994 .

[2]  Hua Zhang,et al.  Single-layer MoS2 phototransistors. , 2012, ACS nano.

[3]  S. L. Li,et al.  High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits. , 2013, Nanoscale.

[4]  Zhixian Zhou,et al.  Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors. , 2016, Nano letters.

[5]  Ting Yu,et al.  Electrically Tunable Valley-Light Emitting Diode (vLED) Based on CVD-Grown Monolayer WS2. , 2016, Nano letters.

[6]  Electric-field screening in atomically thin layers of MoS₂: the role of interlayer coupling. , 2012, Advanced materials.

[7]  Thomas Mueller,et al.  Mechanisms of photoconductivity in atomically thin MoS2. , 2014, Nano letters.

[8]  F. Libisch,et al.  Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction , 2014, Nano letters.

[9]  Wei Wang,et al.  Flexible photodetector from ultraviolet to near infrared based on a SnS2 nanosheet microsphere film , 2015 .

[10]  R. Sankar,et al.  High photosensitivity and broad spectral response of multi-layered germanium sulfide transistors. , 2016, Nanoscale.

[11]  Yan Li,et al.  Wavelength dependent UV-Vis photodetectors from SnS2 flakes , 2016 .

[12]  Lain‐Jong Li,et al.  Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition , 2012, Advanced materials.

[13]  Myoung-Jae Lee,et al.  Deterministic Two-Dimensional Polymorphism Growth of Hexagonal n-Type SnS₂ and Orthorhombic p-Type SnS Crystals. , 2015, Nano letters.

[14]  G. Yang,et al.  Growth of centimeter-scale high-quality In2Se3 films for transparent, flexible and high performance photodetectors , 2016 .

[15]  Jiwon Jeon,et al.  Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse. , 2014, ACS nano.

[16]  Michael Wraback,et al.  Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD , 2000 .

[17]  Aaron J. Littlejohn,et al.  Large Single Crystal SnS2 Flakes Synthesized from Coevaporation of Sn and S , 2016 .

[18]  Peter Sutter,et al.  Tin disulfide-an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics. , 2014, ACS nano.

[19]  R. Sankar,et al.  High performance and bendable few-layered InSe photodetectors with broad spectral response. , 2014, Nano letters.

[20]  Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell. , 2016, Nano letters.

[21]  Qing Hua Wang,et al.  Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. , 2012, Nature nanotechnology.

[22]  M. Bayer,et al.  Exciton and trion dynamics in atomically thin MoSe2 and WSe2: Effect of localization , 2016, 1608.04031.

[23]  A. Sandhu,et al.  High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors , 2014, Nanotechnology.

[24]  Fu-Rong Chen,et al.  Direct formation of wafer scale graphene thin layers on insulating substrates by chemical vapor deposition. , 2011, Nano letters.

[25]  Dumitru Dumcenco,et al.  Electrical transport properties of single-layer WS2. , 2014, ACS nano.

[26]  R. Sankar,et al.  Ultra‐Thin Layered Ternary Single Crystals [Sn(SxSe1−x)2] with Bandgap Engineering for High Performance Phototransistors on Versatile Substrates , 2016 .

[27]  Joerg Appenzeller,et al.  Screening and interlayer coupling in multilayer graphene field-effect transistors. , 2009, Nano letters.

[28]  E. Johnston-Halperin,et al.  Progress, challenges, and opportunities in two-dimensional materials beyond graphene. , 2013, ACS nano.

[29]  Andras Kis,et al.  Ultrasensitive photodetectors based on monolayer MoS2. , 2013, Nature nanotechnology.

[30]  Yiping Wang,et al.  Tuning the Phase and Optical Properties of Ultrathin SnSx Films , 2016 .

[31]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[32]  A. Pan,et al.  High on/off ratio photosensitive field effect transistors based on few layer SnS2 , 2016, Nanotechnology.

[33]  S. Banerjee,et al.  Radio Frequency Transistors and Circuits Based on CVD MoS2. , 2015, Nano letters.

[34]  Junjie Guo,et al.  Observation of abnormal mobility enhancement in multilayer MoS 2 transistor by synergy of ultraviolet illumination and ozone plasma treatment , 2017 .

[35]  T. Zhai,et al.  Large‐Size Growth of Ultrathin SnS2 Nanosheets and High Performance for Phototransistors , 2016 .

[36]  Zhenxing Wang,et al.  Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets. , 2015, Nanoscale.

[37]  Aron Walsh,et al.  Electronic Structure and Defect Physics of Tin Sulfides: SnS, Sn 2 S 3 , and Sn S 2 , 2016 .