High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology
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M. Takenaka | S. Takagi | R. Nakane | M. Yokoyama | O. Ichikawa | M. Hata | Sanghyeon Kim | T. Osada
暂无分享,去创建一个
M. Takenaka | S. Takagi | R. Nakane | M. Yokoyama | O. Ichikawa | M. Hata | Sanghyeon Kim | T. Osada