AWARE (Asymmetric Write Architecture With REdundant Blocks): A High Write Speed STT-MRAM Cache Architecture

Spin-transfer torque magnetic RAM (STT-MRAM) is a promising memory technology for lower level caches because of its high density and nonvolatile nature. However, the high write latency is a bottleneck to its widespread adoption as the future on-chip memory. In this paper, we propose a new cache architecture-asymmetric write architecture with redundant blocks (AWARE)-that can improve the write latency by taking advantage of the asymmetric write characteristics of 1T-1MTJ STT-MRAM bit-cells. Due to the nature of the storage element in STT-MRAM, the time required for the two-state transitions ( 1→ 0 and 0→ 1) is not identical. In other words, one of the state transitions is slower than the other direction. In conventional cache architecture, the overall write latency is limited by the slower transition. However, the AWARE cache design introduces redundant blocks in each row, and they are preset to the initial state that enables the faster transition. Hence the write operations performed in these redundant blocks are much faster than the conventional write scheme. The write latency in AWARE is improved by 30% over conventional cache architecture with no area penalty in the data array. Moreover, the additional tag bits introduced in this technique result in penalty on the total cache area. In addition, the write energy increases modestly by 7% in the proposed cache design. However, this write-energy increase can be mitigated by sacrificing the cache capacity.

[1]  Xiaoxia Wu,et al.  Hybrid cache architecture with disparate memory technologies , 2009, ISCA '09.

[2]  Mircea R. Stan,et al.  Relaxing non-volatility for fast and energy-efficient STT-RAM caches , 2011, 2011 IEEE 17th International Symposium on High Performance Computer Architecture.

[3]  Yiran Chen,et al.  Circuit and microarchitecture evaluation of 3D stacking magnetic RAM (MRAM) as a universal memory replacement , 2008, 2008 45th ACM/IEEE Design Automation Conference.

[4]  M. Hosomi,et al.  A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[5]  Feipei Lai,et al.  Zero-aware asymmetric SRAM cell for reducing cache power in writing zero , 2004, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[6]  Kaushik Roy,et al.  Future cache design using STT MRAMs for improved energy efficiency: Devices, circuits and architecture , 2012, DAC Design Automation Conference 2012.

[7]  Kaushik Roy,et al.  Layout-aware optimization of stt mrams , 2012, 2012 Design, Automation & Test in Europe Conference & Exhibition (DATE).

[8]  Kaushik Roy,et al.  A framework for simulating hybrid MTJ/CMOS circuits: Atoms to system approach , 2012, 2012 Design, Automation & Test in Europe Conference & Exhibition (DATE).

[9]  Xuanyao Fong,et al.  Bit-Cell Level Optimization for Non-volatile Memories Using Magnetic Tunnel Junctions and Spin-Transfer Torque Switching , 2012, IEEE Transactions on Nanotechnology.

[10]  Sudhakar Yalamanchili,et al.  An energy efficient cache design using Spin Torque Transfer (STT) RAM , 2010, 2010 ACM/IEEE International Symposium on Low-Power Electronics and Design (ISLPED).

[11]  Luan Tran,et al.  45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[12]  Yiran Chen,et al.  A novel architecture of the 3D stacked MRAM L2 cache for CMPs , 2009, 2009 IEEE 15th International Symposium on High Performance Computer Architecture.

[13]  Arijit Raychowdhury,et al.  Design space and scalability exploration of 1T-1STT MTJ memory arrays in the presence of variability and disturbances , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[14]  Jun Yang,et al.  Energy reduction for STT-RAM using early write termination , 2009, 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers.