A new junction termination technique using ICP RIE for ideal breakdown voltages

A new junction termination technique using inductively coupled plasma (ICP) reactive ion etching (RIE) is proposed in this paper. By removing the cylindrical and spherical junctions of the planar process we have realized near ideal breakdown voltages with very compact junction termination area. Bipolar power transistors of 800 V voltage rating were fabricated to implement the proposed new junction termination technique using a test element group (TEG) pattern.