论文信息 - BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 10<sup>14</sup>/cm<sup>2</sup> at Oxide/Oxide Interface by the Change of Ferroelectric Polarization - 字舞流文

BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 10¹⁴/cm² at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

S. Datta | P. Ye | A. Shakouri | K. Maize | M. Si | R. Agrawal | Zehao Lin | Joseph Andler | D. Zheng | J. Noh | Junkang Li | X. Lyu | S. Alajlouni | Chang Niu | A. Murray